Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots

Abstract

We report on the improvement of the electrical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag (1 nm)/indium tin oxide (ITO) (250 nm) p-type contacts by using Ni nanodots. As-deposited Ag/ITO contacts with and without the Ni nanodots give non-linear electrical behaviour. However, annealing the samples at 530–630 °C for 1 min in air results in ohmic behaviour. The reverse leakage current characteristics of near UV LEDs are much improved when the Ni nanodots are used. The output power (at 20 mA) of LEDs fabricated with the Ni nanodots is enhanced by a factor of 1.34 as compared with that of LEDs made without the Ni nanodots.