Abstract
The two-dimensional (2D) dynamic cellular automata (CA) method for photoresist etching simulation has been successfully improved by using novel update rules and a novel compensation value calculation method. The improved 2D dynamic CA method demonstrates to be more efficient and accurate. The deep ultraviolet (UV) lithography processes of SU-8 photoresists have been successfully simulated using aerial image simulation, exposure simulation, post-exposure bake simulation and development simulation models, based on the improved CA method. Simulation results demonstrate good agreement with the experimental results. This is useful to optimize the UV lithography process of SU-8 photoresists and improve the efficiency of the design of some micro-electro-mechanical systems devices.
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