Abstract
The characteristics of mercury-sensitized photo-chemical vapor deposition (CVD) grown a-Si:H films and solar cells in the case of dichrolosilane (SiH2Cl2) addition were investigated. The films with a small amount of SiH2Cl2 addition exhibited high photosensitivity, low hydrogen content and low defect density. However, the cells with an i-layer grown by SiH2Cl2 addition showed a low fill factor. It was also observed by secondary ion mass spectroscopy (SIMS) measurements that about 1019 atom/cm3 Cl was incorporated into a-Si:H films, even at the flow rate ratio of 0.01 (SiH2Cl2 to SiH4). Furthermore, it was found that the excess Cl in a-Si:H films was removed by H2 dilution. In the case of H2 dilution together with SiH2Cl2 addition to the i-layer of a-Si solar cells, a high fill factor and high quantum efficiencies, particularly in the medium wavelength region was observed. From numerical analysis, it was determined that the improvement was due to the increase of the electric field in the medium of the i-layer after light soaking. As a result, we achieved a high stabilized efficiency of 9.0% for a 1 cm2 single-junction a-Si:H solar cell.
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