Abstract
We report the effect of zinc-tin-oxide (ZTO) by spray coating on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) for the improvement of both stability and performance. The IGZO/ZTO TFT exhibits the field effect mobility ( ${\mu }_{\text{FE}}$ ) of $18.39~{\text{cm}}^{2}{/\text{V}\cdot \text{s}}$ , threshold voltage ( $\text{V}_{\text{Th}}$ ) of 0.1 V, and subthreshold swing (SS) of 0.16V/dec. The TFT shows excellent stabilities: $\Delta ~\text{V}_{\text{Th}}$ of −1.0 V for negative bias illumination stress (NBIS) and 0.4 V for hot carrier stress. These excellent performance and stability are correlated with the built-in electric field by charge distribution at the IGZO/ZTO hetero-junction. Therefore, ZTO spray coating on IGZO semiconductor can be a good technique to improve device stability.
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