Abstract
We proposed excimer laser annealing (ELA) process and N 2 O plasma pretreatment to reduce the oxide charge densities as well as increase the breakdown voltage of silicon dioxide film as a gate insulator of poly-Si thin film transistors (TFTs) on flexible substrates where the maximum process temperature should be less than 200°C. The experimental results demonstrate that the N 2 O plasma treatment improved the flatband voltage of silicon dioxide film. The proposed ELA and N 2 O plasma treatment also improved poly-Si TFT characteristics, such as subthreshold swing, leakage current, and on current.
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