Abstract
TiO2-based resistive switching memory devices with an inserted ZnO layer were fabricated, and the effect of inserting a ZnO layer between the TiO2 and bottom electrode on the reliability characteristics of TiO2-based memory devices was investigated. The improved endurance and retention performances were achieved in the TiO2-based memory device fabricated with an inserted ZnO layer. The mechanism of reliability improvement was discussed. The inserted ZnO layer is proposed to adjust the distribution of oxygen vacancies across the TiO2 layer due to the lower formation energy of oxygen vacancy in ZnO, which may be responsible for the improved reliability characteristics in the TiO2-based memory device with an inserted ZnO layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.