Abstract
Ge2Sb2Te5/ZnSb (GST/ZS) stacked thin films were proposed for high density phase change memories (PCM). Electrical and structural properties were studied by in-situ resistance measurements and X-ray diffraction (XRD), respectively. The films exhibited good thermal stability and two resistance steps during heating process. A picosecond laser pump-probe system was used to measure phase change speed. Phase change memory cells based on [GST(35nm)/ZS(15nm)]1 thin film were fabricated to test and verify multi-level switch between set and reset states.
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