Abstract
For realizing the next-generation phase-change memories (PCM), it is required to reduce the fluctuation of resistance values in SET state. The Sb-rich phase of Ge 2 Sb 2 Te 5 was proposed to fulfill the complete crystallization process at each SET programming and the PCM devices were fabricated by using the double-layered phase-change materials composed of Ge 2 Sb 2 Te 5 and Ge 18 Sb 39 Te 43 . It was found that the SET resistances and their fluctuation were reduced as the increase of volume ratio of the Ge 18 Sb 39 Te 43 . We can conclude that the compositional modification into the Sb-rich phase can be a good way for improving the SET performances for the PCM applications.
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