Abstract
In this study, we fabricated amorphous In-Ga-Zn-O thin-film transistors (TFTs) with a new structure, in which the source/drain (S/D) electrode is located on different planes. This structure made it possible to use materials with different work functions, in this case indium-tin-oxide (ITO) and titanium (Ti), as the source and drain electrodes to control the overall work function of the TFT. Among the fabricated TFTs, we measured the electrical properties by setting up the Ti (ΦTi≒3.4 eV) and ITO (ΦITO≒4.7 eV) electrodes as the source and drain, respectively. The off-planed S/D a-IGZO TFT showed excellent electrical characteristics: a threshold voltage of -0.33 V, a subthreshold swing of 219.9 mV/dec, field-effect-mobility of 18.1 cm²/V sec, and an Ion/Ioff ratio of 2.3×108. Additionally, the threshold voltage shift was the smallest in both the positive and negative biastemperature stress tests, respectively. As a result, the a-IGZO TFT with an off-planed S/D electrode is shown to be a promising structure capable of improving the electrical performance and reliability.
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