Abstract
We report a systematic study of the near-infrared intersubband absorption in AlGaN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without δ-doping. The transition energies are in agreement with theoretical calculations including many-body effects. A dramatic reduction of the intersubband absorption linewidth is observed when the δ-doping is placed at the end of the quantum well. This reduction is attributed to the improvement of interface roughness. The linewidth dependence on interface roughness is well reproduced by a model that considers the distribution of well widths measured with transmission electron microscopy.
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