Abstract
The morphological stability of Ag thin film on a TiN layer with a thin interposing metal layer has been investigated. Due to the formation of Ag spikes at the Ag/Si interface, a diffusion barrier is needed to buffer the interdiffusion of Ag with Si. TiN films deposited by physical vapor deposition (PVD) or metalorganic chemical vapor deposition (MOCVD) were used. A Au or Ti (∼3 nm) layer was used as the glue layer between Ag and TiN. In a Ag/Au/TiN system, a mixed Ag–Au layer is stable on PVD-TiN at temperatures as high as 450 °C. In Ag/Ti/TiN systems, the thermal stability of Ag on CVD-TiN is superior to that on PVD-TiN. Ag layers were found to be discontinuous after annealing at 300 and 350 °C on PVD-TiN and CVD-TiN systems, respectively.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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