Improvement of magnetostriction performance by doping Mg in spinel MnV2O4

Abstract

By a combination of magnetization M(T), M(H) and strain ΔL/L700K, ΔL/L0Oe, the positive magnetostrictions up to ∼5000 ppm originating from the rearrangement of tetragonal domains were observed in spinel Mn0.85Mg0.15V2O4, which exhibits two successive magnetic transitions at TC ∼ 42 K and T* ∼ 28 K. An anomalous magnetic hysteresis loop under a high field occurs below T*, caused by the rearrangement of tetragonal domains. We found that the Mg-doping at the Mn site can effectively promote the positive magnetostriction in Mn1-xMgxV2O4 systems. Moreover, the remnant strain can be significantly lowered by Mg-doping due to the enhancement of magnetic anisotropy. These results provide a possible approach for further optimizing the performance of magnetic shape-memory materials.