Abstract
In this paper, we report the growth of M -plane GaN thin films on LiGaO 2 (100) substrates pre-annealed in vacuum and in air ambient. The surface of M -plane GaN film grown on the LiGaO 2 (100) substrate pre-annealed in air ambient was significantly improved. X-ray diffraction data showed that the M -plane GaN thin film grown on the LiGaO 2 (100) substrate pre-annealed in air ambient has better crystal quality than that grown on the LiGaO 2 (100) substrate pre-annealed in vacuum. In addition, the strain generated between GaN thin film and LiGaO 2 substrate was relaxed when the GaN thin film grew on the LiGaO 2 substrate pre-annealed in air ambient. It revealed that the thermal annealing LiGaO 2 substrate in air ambient can suppress the formation of lithium-rich surface effectively, and then one can grow a high quality M -plane GaN thin film on the LiGaO 2 substrate.
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