Abstract
One of the main reasons that the emission efficiency of GaN-based light emitting diodes (LEDs) decreases significantly as the emission wavelength shorter than 300 nm is the low light-extraction efficiency (LEE). Especially in deep ultra-violet (DUV) LEDs, light propagating outside the escape cone and being reflected back to the semiconductor or substrate layer is absorbed not only by active layers but also by p-type layers with narrower bandgaps and electrodes that is neither transparent nor reflective for the DUV wavelength. In this report, we propose a DUV LED structure with thin indium-tin-oxide (ITO) layer as the p-ohmic contact and DBR as the reflectivity mirror. The DUV LED with the ITO/DBR p-ohmic-contact layer showed the output power of 30% higher than that from the DUV LED with Ni/Au p-ohmic-contact layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
