Abstract
Abstract Biaxially aligned (triaxially aligned) YSZ thin films were formed on polycrystalline substrates by ionbeam assisted deposition (IBAD). The biaxial aligning of YSZ was much affected by the incident angle of the assisting ion-beam toward the substrate. In-plane aligned YBCO thin films were deposited by laser ablation on polycrystalline substrates, Hastelloy alloy, with biaxially aligned YSZ thin films as the buffer layers. Jc-B characteristics of these YBCO thin films were improved in one order of magnitude, compared with ones buffered with conventionally sputtered YSZ, and high Jc values of 10 5 A/cm 2 (77K, OT) range stable for many times were obtained. The small mis-orientation angles at grain boundaries of in-plane aligned YBCO thin film along a- and b-axes were observed by TEM.
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