Abstract
In this work, we report an innovative approach to improve the interface properties of SiC/SiO2 metal oxide semiconductor (MOS) capacitors. High temperature (1350°C) oxidation under different ambient is followed by a combination of post-oxidation annealing (POA) treatments using N2, N2O and NO gases. TOF-SIMS analysis shows silicon and nitrogen peaks near the SiC/SiO2 interface. The silicon peak is attributed to the emission of silicon and carbon atoms during high temperature oxidation. The accumulation of nitrogen is caused by the presence of nitrogen during oxidation or POA. One of the lowest interface-trap densities along with good dielectric strength has been demonstrated with the N2 and NO gas POA treatment.
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