Abstract
In this study, the impact of various growth parameters, such as wafer temperature, device structures, and substrate misorientation, on the quality of InGaP epitaxial layers and solar cells grown in a planetary MOVPE reactor using TBP as a P source were investigated and optimized. Results showed that the carrier lifetime in unintentionally n-doped InGaP significantly decreased as the growth temperature increased from 560 to 590 °C. At temperatures above 600 °C, the growth of InGaP was unsuccessful due to extremely rough surface morphology. The study revealed that InGaP rear homojunction and rear heterojunction solar cells using n-type InGaP base layers displayed improved photo-carrier collection and performance compared to traditional front junction solar cells with p-type InGaP base layers. Notably, InGaP grown on GaAs (001) with a 5° miscut towards (111)A was found to have better quality, while InGaP grown on GaAs (001) with a 6° tilt towards (111)B had worse results in terms of carrier lifetime, PL intensity, and solar cell performance.
Published Version
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