Abstract
Graphene was prepared by negative C4 cluster ion implantation at 5keV/atom followed by vacuum thermal annealing and cooling. The surface morphology and structure of samples were studied by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy. Improvement of the graphene quality was realized by optimization of the post thermal processes. 1–2 layer graphene was obtained with I2D/IG ratio of 1.43 and ID/IG ratio of 0.07 at the implantation dose of 12×1015atoms/cm2 and annealed at 900°C followed by cooling at 20°C/min.
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