Abstract
ABSTRACTThe effects of nitrogen-radical treated amorphous silicon (a-Si) films on laser-crystallization behavior have been studied for the improvement of the grain-growth and the surface roughness. The radical treatments were performed by the rf (13.56 MHz) plasma-enhanced-chemical-vapor-deposition (PECVD) system with N2 gas before the laser-crystallization. The grain-size of the laser-crystallized polycrystalline silicon (poly-Si) film with 600 seconds of radical-treatment time was remarkably increased by the relaxation of solidification process caused by the possible evolution of solid phase SiNx compounds which shows the low thermal conductivity. The electrical conductivity at 30 °C was rather lager value of 3×10-5 Ω-1cm-1 than 1×10-5 Ω-1cm-1 of poly-Si without radical treatment, while the highly resistive SiNx compounds were formed. From the SEM images, the surface roughness was also improved by the selective etching of the 5%-water-diluted hydrofluoric (HF) acid on the grain boundaries which the SiNx compounds were well segregated into during the laser-crystallization.
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