Improvement of GaInSb crystal quality by rotating magnetic field

Abstract

A rotating magnetic field (RMF) was applied to the vertical Bridgman process for Ga0.86In0.14Sb crystal growth and high-quality GaInSb ingots (Φ25 × 100) were prepared. The results show that the crystal crystallinity improved with an increase in the RMF intensity. An increase in the RMF intensity significantly reduced both the radial and axial segregations of indium in the GaInSb crystal. The radial segregation of indium in the 25–75 mm axial direction reduced to 0.086 mol% from 0.237 mol% per mm, while the axial segregation reduced to 0.048 mol% from 0.139 mol% per mm. Meanwhile, an increase in the RMF intensity also decreased the dislocation density in the crystal from 9.052 × 104 to 6.578 × 103 cm−2. With an increase in the RMF intensity, the carrier mobility increased from 1.331 × 103 to 1.738 × 103 cm2/(V s), the resistivity reduced from 1.461 × 10−3 to 1.149 × 10−3 Ω cm, and the infrared transmission almost reached 36%.