Abstract
The Vertical Gradient Freeze (VGF) technique is an important method for growing high quality compound semiconductors such as GaAs. Results obtained with a novel VGF set-up developed for the growth under influence of a rotating magnetic field (RMF) and under vapour pressure control are presented in this paper. The RMF is shown to be a powerful tool to affect the heat and mass transport within the melt in a definite way. In GaAs:Si growth, RMF induced flow results in a decreased curvature of a nominally concave-shaped interface, i.e., it contributes to an axial heat transfer at the solid-liquid interface. The axial dopant segregation of Ga in Ge is found to be improved under continuous RMF action due to better mixing of the melt. The set-up also allowed to determine the influence of carbon and the arsenic vapour pressure on the dopant incorporation and crystal quality.
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