Abstract
Abstract— Metal silicide on silicon‐tip field‐emission arrays (FEAs) seems to be a promising way to improve the performance of the silicon‐tip FEAs. The niobium‐silicide layer was formed on a silicon surface. The Nb‐silicide FEAs were prepared by a silicidation process. The formation of the Nb‐silicide layer on a silicon surface was confirmed by using X‐ray diffractometry (XRD). The current‐voltage characteristics and the current fluctuation were measured under an ultra‐high‐vacuum environment using a Kiethley SMU 237 meter. The turn‐on voltage of silicon‐tip FEAs was decreased from 64 to 47 V by the formation of the Nb‐silicide layer on silicon tips, and the emission current fluctuation (2%) was more stable than that of conventional silicon‐tip FEAs.
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