Abstract

ln this paper, a large area silicon tip<field emitter array, which coated with thin diamond layers by electrophoresis, is characterized. The dens@ of n-type high conductivity silicon tips is 2400/mm2. Silicon tip arrays were deposited with diamond powder by electrophoresis with water solution, and the particle size of the synthetic diamond powder is smaller than 250nm. Measurement was carried out af room temperate under a vacuum of O.O05Pa, with a 0.3 diameter tungsten needle as the anode, and the tips-to-anode distance was 0.02. The turn-on electric jeld intensity of the array was IMY;/,, and a 6mA maximum current was obtained by anode with an anode voltage of I7OV, the maximum current density was

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