Abstract
A uniform current injection is important in long-wavelength vertical-cavity surface-emitting lasers (VCSELs) for low-threshold, high-efficiency, and stable-mode operation. The utilization of a tunnel junction can solve these problems by employing an n-type highly conductive material for an anode. In this study, the electrical property of a long-wavelength VCSEL with a tunnel junction is analyzed using an equivalent circuit model. The optical absorption loss of a tunnel-junction-embedded VCSEL is also investigated. This results in the quantitative estimation of lasers with a tunnel junction in terms of device resistance, carrier distribution in the active region and optical absorption loss. The introduction of a tunnel junction may improve the output power, power-conversion efficiency, and mode stability of long-wavelength VCSELs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
