Abstract
We propose a method to improve the thermal stability of thin CoSi2 layers on polycrystalline silicon substrates. Nitrogen atoms have been implanted at 55 keV to a dose of 5×1015/cm2 through a 70 nm silicide layer in order to locate the implanted peak near the silicide/silicon interface. The large band of cavities created at the interface has extended the thermal stability window by 125 °C with respect to the standard process. The improvement has been related to the silicide grain-boundary pinning due to the increase of the interface free energy contribution.
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