Abstract
We investigate improvement of catastrophic optical damage (COD) level for Al-free 0.98-/spl mu/m ridge waveguide laser diodes (LDs) using the impurity induced layer disordering (IILD) process applied near the facets. The IILD is used for the purpose of forming transparent windows near both facets of the LDs utilizing its ability to increase bandgap energy of the GaInAs-GaInAsP strained quantum-well (QW) active layer. Improvement of the cod level by at least 1.65 times compared to the conventional LDs is obtained for the LDs with Si/sup +/ implantation followed by annealing at 900/spl deg/C for 10 min.
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