Abstract

The effect of the electrolyte temperature on the formation of anodic films on Cd x Hg 1− x Te and the electrical properties of these coatings were investigated using metal/oxide/semiconductor structures. The native oxides were grown in 1:9 solutions of 1 N KOH in ethylene glycol. The electrolyte temperature was varied from -25 to 95°C. Optimum dielectric properties were achieved at an electrolyte temperature of 50°C. The oxides grown at lower temperatures were extremely unstable. The 1:9 solutions of 1 N KOH in ethylene glycol lost their passivation capability at about 95°C.

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