Improvement of AlN crystalline quality with high epitaxial growth rates by hydride vapor phase epitaxy

Abstract

We have demonstrated that high-quality aluminium nintride (AlN) single crystal can be grown at high growth rates by hydride vapor phase epitaxy (HVPE) with a help of using AlN templates and step growth technique. A colorless and transparent AlN layer with 83 μm thick was grown at a growth rate of 57 μm/h at 1450 °C. Its full-width at half-maximum for {0 0 0 2} plane was 295 arcsec and that for {1 0 1¯ 1} plane was 432 arcsec. Grown AlN layer was transparent in the visible and ultraviolet region and a sharp absorption edge with band gap energy of 5.96 eV was confined.