Abstract
This paper presented the InGaN/GaN light-emitting diodes (LEDs) using one-step design of indium–tin-oxide (ITO) layer as the current blocking layer (CBL) structure was fabricated successfully and the optoelectronic properties were also measured. The ITO CBL LEDs exhibit higher light output power (16.3% at 20 mA) compared with that of the reference LEDs without CBL. As for the usual current blocking process, the one-step design of ITO CBL as the current blocking structure was demonstrated in our experiment and proved to be an effective, feasible and inexpensive way, with fewer steps and less cost, to improve the LEDs' performance.
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