Abstract
In–Ga–Sn–O (IGTO) thin-film transistors (TFTs) were fabricated with channel lengths from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3 \mu \text{m}$ </tex-math></inline-formula> to 500 nm to investigate the short-channel effects (SCEs), in which IGTO channel compositions were modulated during the atomic-layer deposition. The SCEs appearing in the IGTO TFTs were found to be manifested by increasing the In/Ga ratio of IGTO channel, showing typical channel composition dependence. Alternatively, small values of the channel-length reduction and contact resistance could be obtained to be 50 nm and 0.52 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{k}\Omega $ </tex-math></inline-formula> , respectively, for the device using the IGTO channel with an In/Ga ratio of 1.7. Threshold voltage shifts of the IGTO TFT were estimated to be only +0.03 and +1.22 V under negative and positive gate-bias stress for 104 s, respectively, even with a channel length as short as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1 \mu \text{m}$ </tex-math></inline-formula> .
Published Version
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