Improvement in performance and degradation characteristics of MOSFETs with thin gate oxides grown at high temperature

Abstract

A study of the effect of gate oxide growth temperature on the performance and degradation of MOSFETs with thin ( approximately 11 nm) gate oxides is reported. Channel mobility for electrons and holes is observed to increase with the increase in the oxidation temperature (800 to 1100 degrees C). Degradation of on-state and off-state parameters resulting from channel hot-carrier stress is investigated. A good correlation is observed between the degradation of device parameters and interface state generation. It is found that the interface hardness to hot-carrier stress is higher in the MOSFETs with gate oxides grown at higher temperatures. >