Improvement in microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by applying ZnO–B2O3–SiO2

Abstract

The microwave dielectric properties of ZnO–B2O3–SiO2 (ZBS)-doped La(Mg0.5Sn0.5)O3 ceramics were investigated with a view to their application in microwave devices. ZBS-doped La(Mg0.5Sn0.5)O3 ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of ZBS-doped La(Mg0.5Sn0.5)O3 ceramics exhibited no significant variation of phase with sintering temperature. By adding 2.0 wt% ZBS, a dielectric constant of 19.14, a quality factor (Q × f) of 35,800 GHz, and a temperature coefficient of resonant frequency τf (−86 ppm/°C) were obtained when La(Mg0.5Sn0.5)O3 ceramics were sintered at 1,400 °C for 4 h.