Improvement in electrical performance of radiation-damaged silicon solar cells by annealing

Abstract

We have examined the temperature dependence of radiation damage for silicon solar cells that are exposed to γ-rays, and attempted the improvement of electrical performance of radiation-damaged solar cells via annealing. The power output of the solar cells was measured continuously during γ-irradiation and annealing. Although the power output decreases with increasing temperature during γ-irradiation, the resistance against radiation damage with respect to the power output was enhanced. When annealed after γ-irradiation, the solar cells generated a power output having a structural form that was determined by the depth or the number of donors or acceptors existing in the depletion layer of the solar cells, and the electrical performance of the solar cells was improved. In addition, solar cells were damaged by neutron irradiation; however, the electrical performance was not improved by annealing.