Year-end Sale % OFF 
Abstract
TiN single layers and double-layered ZnO/TiN thin films were deposited on soda-lime-silicate glass substrates by magnetron sputtering. The influence of ZnO underlayers on TiN thin films was investigated as a function of oxygen gas pressure during ZnO underlayer deposition. It was found from X-ray diffraction (XRD) measurement that the TiN single layers exhibited {111}-preferred orientation, whereas the {100}-oriented TiN thin films could be obtained on ZnO underlayers. Furthermore, when the oxygen gas pressure during ZnO underlayer deposition decreased, the XRD peak intensity due to TiN{100} increased. The X-ray reflectivity measurement revealed that the ZnO underlayers exhibited small roughness and high density as the oxygen gas pressure decreased during deposition. It can be concluded that the smooth and dense ZnO underlayers enhanced the crystal growth of TiN thin films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
