Abstract
In this study, the pretreatment on the surface of a polycrystalline silicon (poly-Si) channel layer using the N2 plasma generated by a hollow cathode (HC) generation system was proposed. It was found that the pretreatment can not only passivate the defect states but also present a smooth oxide/poly-Si interface, which can significantly improve the device performance. Therefore, the scheme used can offer a high-efficiency passivation with low plasma damage. In addition, the reliability of the device was greatly enhanced after the N2 plasma pretreatment as a result of the formation of strong Si–N bonds and a smooth oxide/poly-Si interface. We believe that the N2 plasma pretreatment using the HC system is suitable for the mass-production of high-resolution displays.
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