Abstract
It has been a difficult to deposit a uniform film on the inner surface of monocapillary due to the high length-diameter ratio. Atomic layer deposition (ALD) shows great potential to coat conformal film on complex substrates. However, it is still a challenge to coat uniform film along the length of the capillary for regular deposition parameters. In this work, HfO2 film was deposited inside monocapillary via ALD. The film uniformity along the monocapillary was investigated by cross-section scanning electron microscope (SEM) images and the bond states of one of the HfO2 films were studied via X-ray photoelectron spectroscopy (XPS). Using the routine deposition parameters, the gas flowing through the monocapillary is controlled to be small, large and medium qualitatively by covering some of the inlets or outlets, changing the connection between monocapillary and outlets simply. SEM results demonstrate that smooth HfO2 film with uniform thickness can be acquired on the inner surface of monocapillary with length-diameter ratio 200 (length 10 cm and inner diameter 0.5 mm). XPS results show that Hf hydroxide is generated when the gas flowing through the monocapillary is large.
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