Abstract
We employ quaternary graded AlInGaN layers numerically in the active region to study the effect on the optoelectronic properties of AlGaN-based ultraviolet light-emitting diodes (UV LEDs). We evaluated the device performance by analyzing carriers concentrations, carrier flux, radiative recombination rate, energy band diagrams and internal quantum efficiency (IQE). We compare the results with the reference device structure and found that the device with quaternary graded AlInGaN layers has high peak efficiency as well as low efficiency droop.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
