Abstract
In order to improve the performance of AlGaN-based deep ultraviolet light-emitting diodes (UV LEDs), the optical and physical properties of AlGaN-based deep UV LEDs with a p-type and thickened last quantum barrier (LQB) are studied numerically. The output power-current performance curves, internal quantum efficiency, electroluminescence intensity, energy band diagrams, distributions of carrier concentrations, and the radiative recombination rates in the active region are investigated by Advance Physical Model of Semiconductor Devices (APSYS) software. The results reveal that, compared with the conventional one, the AlGaN-based deep UV LED with a p-type and thickened LQB achieves a remarkable improvement in performance, which is mainly attributed to the enhancement of hole injection and electron confinement.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
