Abstract
In order to improve the performance of AlGaN-based deep ultraviolet light-emitting diodes (UV LEDs), the optical and physical properties of AlGaN-based deep UV LEDs with a p-type and thickened last quantum barrier (LQB) are studied numerically. The output power-current performance curves, internal quantum efficiency, electroluminescence intensity, energy band diagrams, distributions of carrier concentrations, and the radiative recombination rates in the active region are investigated by Advance Physical Model of Semiconductor Devices (APSYS) software. The results reveal that, compared with the conventional one, the AlGaN-based deep UV LED with a p-type and thickened LQB achieves a remarkable improvement in performance, which is mainly attributed to the enhancement of hole injection and electron confinement.
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