Abstract

We fabricated magnetic tunnel junctions (MTJs) with a Co-based full-Heusler alloy thin film of Co2MnGe (CMG) and a MgO tunnel barrier. The microfabricated MTJs with a Co-rich CMG film showed relatively high tunnel magnetoresistance ratios of 83% at room temperature and 185% at 4.2K. These values are much higher than those previously obtained for CMG/MgO MTJs with a Co-deficient CMG film.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call