Abstract
We fabricated magnetic tunnel junctions (MTJs) with a Co-based full-Heusler alloy thin film of Co2MnGe (CMG) and a MgO tunnel barrier. The microfabricated MTJs with a Co-rich CMG film showed relatively high tunnel magnetoresistance ratios of 83% at room temperature and 185% at 4.2K. These values are much higher than those previously obtained for CMG/MgO MTJs with a Co-deficient CMG film.
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