Abstract
In this paper, a multi-layer NbOx selector is fabricated and compared with a single-layer NbOx selector. The multi-layer NbOx selector exhibits better performances (<1/5 leakage current, ×5 selectivity and >106 endurance) than the single-layer NbOx selector. By using a conductive atomic force microscopy (C-AFM), we revealed that numerous leakage paths in the NbOx film can be suppressed by adopting an insulating barrier layer within the multi-layer NbOx selector.
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