Improved thermal stability and ultralow resistance drift of pseudo-binary Sb2Se3–Bi2S3 material

Abstract

Pseudo-binary material Sb2Se3–Bi2S3 is constructed using Sb2Se3 (high thermal stability but high resistance drift) and Bi2S3 (low resistance drift but low thermal stability). Sb2Se3–Bi2S3 possesses the advantages of the two binary compounds and shows good thermal stability and ultralow resistance drift, which are related to the presence of amorphous Sb–Se phases and precipitation of Bi2S3 nanoparticles, respectively. The (Sb2Se3)43.2(Bi2S3)56.8 material has high crystallization temperature (220 °C) and low resistance drift (0.0022). Therefore, Sb2Se3–Bi2S3 could be one of the most promising materials for phase change memory.