Abstract
For nonvolatile memory applications, thin-film ferroelectric capacitors having high level of switching endurance (or ferroelectric fatigue limit) are required. This paper presents results that demonstrate improved endurance characteristics in our semiconductor-device quality, sol-gel derived lead zirconate-titanate (PZT) capacitors compared to other published results under comparable test conditions. These improved endurance characteristics have been obtained through continued developments in the PZT film deposition process, electrode metallization and capacitor fabrication techniques. Capacitors with top electrode of gold, platinum or palladium film and bottom electrode of platinum-titanium film were tested for endurance and related properties of transient current response, leakage current density, and small-signal capacitance-voltage and conductance-voltage characteristics. An alloying heat treatment of the gold or platinum top electrode to the PZT film significantly improved the endurance characteristi...
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