Abstract
Silicon Carbide (SiC) based MOS devices are one of the promising devices for high temperature, high switching frequency and high power applications. In this paper, the static and dynamic characteristics of an asymmetric trench gate SiC IGBT with high-k dielectrics- HfO2 and ZrO2 are investigated. SiC IGBT with HfO2 and ZrO2 exhibited higher forward transconductance ratio and lower threshold voltage compared to conventionally used SiO2. In addition, lower switching power losses have been observed in the case of high-k dielectrics due to reduced tail current duration.
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