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Abstract
Subthreshold characteristics of n-channel silicon-on-sapphire (SOS) MOSFETs have been measured following solid-phase epitaxial regrowth of the epitaxial film. Results obtained from planar n-channel transistors show that an increase in the subthreshold current slope can be obtained by improving the quality of the silicon layer. These results are explained in terms of a reduction in the density of interface traps present at the Si/SiO/sub 2/ interface.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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