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Abstract
The performance of NMOS/SOS devices designed for near micron geometries is shown to be enhanced markedly by pre-process SOS material improvements. A description of the double solid phase epitaxial regrowth technique, DSPE, is presented including the results of several materials evaluation, techniques: Rutherford backscattering and channeling spectrometry, X-ray twin content, sheet resistance, spreading resistance, ultraviolet reflectivity, and Hall data vs. temperature. Post-MOS process evaluation data of materials and device properties is also presented, which includes: gated Hall data, SIMS, sheet resistance, majority and minority carrier mobility, threshold voltage, subthreshold current slope, back channel leakage current, and electrical carrier density profiles. Significantly enhanced device performance is reported, such as ≥20% improvement in all mobilities, factor of 100 reduction in twin content, factor of 5 to 10 reduction in backchannel leakage, and 15 to 25% improvement in subthreshold current slope.
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