Abstract
Silicon oxide films with a small amount of alpha alumina particles embedded in the glass matrix were prepared using the sol-gel method. It is found that the structural properties of these samples are superior to those observed in similarly prepared films, but without the alumina particles. This conclusion was deduced from analysis of the oxygen diffusion measurements through the SiO2 layer, using a novel method, and from the measured dielectric breakdown field. It is found that the oxygen diffusion coefficient is much lower and the dielectric breakdown field is larger in samples with the alumina particles.
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