Abstract
Stability has been investigated for short-channel hydrogenated n-channel polycrystalline thin-film transistors (poly-Si TFTs) with very thin (12 nm) electron cyclotron resonance (ECR) N/sub 2/O-plasma gate oxide. The TFTs show negligible changes in the electrical characteristics after hot-carrier stresses, which is due to the highly reliable interface and gate oxide. The hydrogenated TFTs with 3-/spl mu/m gate length TFTs exhibit very small degradation (/spl Delta/V/sub th/<15 mV) under hot-carrier stresses and Fowler-Nordheim (F-N) stress (/spl Delta/V/sub th/=/sub 81/ mV, /spl Delta/Gm/Gm=2.2%, /spl Delta/S/S=4.7%).
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