Abstract

A polymer-assisted graphene transfer method is used to transfer sheets of monolayer and multilayer graphene onto the passivation layer of ion-sensitive field effect transistor arrays. The arrays are fabricated using commercial 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology and contain 3874 pixels sensitive to pH changes on the top silicon nitride surface. By inhibiting dispersive ion transport and hydration of this underlying nitride layer, the transferred graphene sheets help address non-idealities in the sensor response while retaining some pH sensitivity due to the presence of ion adsorption sites. Improvements in hydrophilicity and electrical conductivity of the sensing surface after graphene transfer, as well as in-plane molecular diffusion along the graphene-nitride interface, also greatly improve spatial consistency across an array, allowing for ∼20% more pixels to remain within operating range and enhancing sensor reliability. Multilayer graphene offers a better performance trade-off than monolayer graphene, reducing drift rate by ∼25% and drift amplitude by ∼59% with minimal reduction in pH sensitivity. Monolayer graphene offers slightly better temporal and spatial uniformity in performance of a sensing array, which is associated with the consistency in layer thickness and a lower defect density.

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