Abstract
This paper presents an LTSpice model for a Phase Change Memory (PCM) cell that accurately simulate the temperature profile, the crystalline fraction and the resistance of the cell as a function of the programming pulse based on physical theories. The model is able to generate the I-V characteristics of a PCM cell, and precisely simulate the drift phenomenon of resistance and threshold voltage at the amorphous phase. The parameters in the model are calibrated with experimental data, and the exact duration of the programming pulse and OFF time are calculated to accurately assess the impact of time. The simulation results of the proposed PCM model are in close agreement with experimental results.
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