Abstract
This paper presents a novel phase change memory (PCM) cell emulator circuit design created solely with off-the-shelf discrete electronic components. The designed emulator circuit reproduces PCM cell behavior in terms of temperature across the cell, threshold voltage, and programmed resistance levels in response to a given input. The presented circuit is designed and tested in simulation environment using LTSpice. The circuit was then built with CMOS 0.35µm technology along with other off-the-shelf discrete components. The designed emulator circuit successfully generated the operational features of a PCM cell. The emulator circuit assessed the impact of the programming time, produced the standard I-V characteristics of a PCM element and retained the stored data throughout the duration of operation. Furthermore, the simulation and experimental results of the designed emulator circuit were found to be in close agreement with the experimental data obtained from an actual Ge2Sb2Te5 (GST) based PCM element.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
